[9832pcs Stock]
- Bilang ng Bahagi:
- 2SA1930,LBS2DIAQ(J
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS PNP 2A 180V TO220-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Mga Transistor - Bipolar (BJT) - RF and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SA1930,LBS2DIAQ(J electronic components. 2SA1930,LBS2DIAQ(J can be shipped within 24 hours after order. If you have any demands for 2SA1930,LBS2DIAQ(J, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SA1930,LBS2DIAQ(J Mga katangian ng produkto
Bilang ng Bahagi :
2SA1930,LBS2DIAQ(J
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS PNP 2A 180V TO220-3
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Transistor :
PNP
Kasalukuyang - Kolektor (Ic) (Max) :
2A
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
180V
Vce Saturation (Max) @ Ib, Ic :
1V @ 100mA, 1A
Kasalukuyang - Collector Cutoff (Max) :
5µA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA, 5V
Kapangyarihan - Max :
2W
Dalas - Paglilipat :
200MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-3 Full Pack
Package ng Tagabigay ng Device :
TO-220NIS
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