SIHP8N50D-E3 Pagpepresyo (USD) [113540pcs Stock]
- 1 pcs$0.80275
- 10 pcs$0.71161
- 100 pcs$0.56247
- 500 pcs$0.43621
- 1,000 pcs$0.32577
- Bilang ng Bahagi:
- SIHP8N50D-E3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 500V 8.7A TO220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - Programmable Unijunction, Transistor - Espesyal na Pakay, Mga module ng Power driver, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - Bipolar (BJT) - RF and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SIHP8N50D-E3 electronic components. SIHP8N50D-E3 can be shipped within 24 hours after order. If you have any demands for SIHP8N50D-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHP8N50D-E3 Mga katangian ng produkto
Bilang ng Bahagi :
SIHP8N50D-E3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 500V 8.7A TO220AB
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
500V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
8.7A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
850 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
527pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
156W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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