Taiwan Semiconductor Corporation - HS1FL R3G

KEY Part #: K6433130

HS1FL R3G Pagpepresyo (USD) [1102456pcs Stock]

  • 1 pcs$0.03355

Bilang ng Bahagi:
HS1FL R3G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 300V 1A SUB SMA. Rectifiers 1A 300V SUPER FAST SMT
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - RF, Thyristors - Mga TRIAC, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single, Diode - Rectifiers - Arrays, Transistor - Bipolar (BJT) - Arrays and Transistor - IGBTs - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation HS1FL R3G electronic components. HS1FL R3G can be shipped within 24 hours after order. If you have any demands for HS1FL R3G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HS1FL R3G Mga katangian ng produkto

Bilang ng Bahagi : HS1FL R3G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 300V 1A SUB SMA
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 300V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 950mV @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 300V
Capacitance @ Vr, F : 20pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-219AB
Package ng Tagabigay ng Device : Sub SMA
Operating temperatura - Junction : -55°C ~ 150°C

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