TRS8E65C,S1Q Pagpepresyo (USD) [12497pcs Stock]
- 1 pcs$4.22191
- Bilang ng Bahagi:
- TRS8E65C,S1Q
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- DIODE SCHOTTKY 650V 8A TO220-2L.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga module ng Power driver, Transistor - Mga FET, MOSFET - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Programmable Unijunction, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TRS8E65C,S1Q electronic components. TRS8E65C,S1Q can be shipped within 24 hours after order. If you have any demands for TRS8E65C,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TRS8E65C,S1Q Mga katangian ng produkto
Bilang ng Bahagi :
TRS8E65C,S1Q
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
DIODE SCHOTTKY 650V 8A TO220-2L
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) :
650V
Kasalukuyang - Average na Rectified (Io) :
8A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.7V @ 8A
Bilis :
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) :
0ns
Kasalukuyang - Reverse Leakage @ Vr :
90µA @ 650V
Capacitance @ Vr, F :
44pF @ 650V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-2
Package ng Tagabigay ng Device :
TO-220-2L
Operating temperatura - Junction :
175°C (Max)
Pinakabagong Balita
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