STW58N65DM2AG Pagpepresyo (USD) [7905pcs Stock]
- 1 pcs$5.21348
- 10 pcs$4.69037
- 100 pcs$3.85635
- 500 pcs$3.23099
- Bilang ng Bahagi:
- STW58N65DM2AG
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 48A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Thyristors - SCR - Mga Module, Transistor - Bipolar (BJT) - Single, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Single, Mga Transistor - JFET and Thyristors - Mga SCR ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STW58N65DM2AG electronic components. STW58N65DM2AG can be shipped within 24 hours after order. If you have any demands for STW58N65DM2AG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STW58N65DM2AG Mga katangian ng produkto
Bilang ng Bahagi :
STW58N65DM2AG
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CH 650V 48A
Serye :
Automotive, AEC-Q101, MDmesh™ DM2
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
48A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 24A, 10V
Vgs (th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
88nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
4100pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
360W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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