SI3590DV-T1-E3 Pagpepresyo (USD) [344842pcs Stock]
- 1 pcs$0.10726
- 3,000 pcs$0.09710
- Bilang ng Bahagi:
- SI3590DV-T1-E3
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 30V 2.5A 6TSOP.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga module ng Power driver, Transistor - IGBTs - Mga Module, Diode - RF, Thyristors - Mga TRIAC and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix SI3590DV-T1-E3 electronic components. SI3590DV-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI3590DV-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI3590DV-T1-E3 Mga katangian ng produkto
Bilang ng Bahagi :
SI3590DV-T1-E3
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N/P-CH 30V 2.5A 6TSOP
Serye :
TrenchFET®
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
2.5A, 1.7A
Rds On (Max) @ Id, Vgs :
77 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
-
Kapangyarihan - Max :
830mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
Package ng Tagabigay ng Device :
6-TSOP
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