DMG6601LVT-7 Pagpepresyo (USD) [953326pcs Stock]
- 1 pcs$0.03880
- 3,000 pcs$0.03524
- Bilang ng Bahagi:
- DMG6601LVT-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET N/P-CH 30V 26TSOT.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Thyristors - Mga TRIAC and Transistor - Programmable Unijunction ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMG6601LVT-7 electronic components. DMG6601LVT-7 can be shipped within 24 hours after order. If you have any demands for DMG6601LVT-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMG6601LVT-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMG6601LVT-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET N/P-CH 30V 26TSOT
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N and P-Channel
Tampok ng FET :
Logic Level Gate
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
3.8A, 2.5A
Rds On (Max) @ Id, Vgs :
55 mOhm @ 3.4A, 10V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
422pF @ 15V
Kapangyarihan - Max :
850mW
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-23-6 Thin, TSOT-23-6
Package ng Tagabigay ng Device :
TSOT-26
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