Taiwan Semiconductor Corporation - ESH3D V6G

KEY Part #: K6426615

ESH3D V6G Pagpepresyo (USD) [721615pcs Stock]

  • 1 pcs$0.05126

Bilang ng Bahagi:
ESH3D V6G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 200V 3A DO214AB. Rectifiers 25ns 3A 200V UlFst Recov Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Thyristors - Mga SCR, Mga Transistor - JFET, Diode - Mga Rectifier ng Bridge and Transistor - IGBTs - Mga Module ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation ESH3D V6G electronic components. ESH3D V6G can be shipped within 24 hours after order. If you have any demands for ESH3D V6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ESH3D V6G Mga katangian ng produkto

Bilang ng Bahagi : ESH3D V6G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 200V 3A DO214AB
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : -
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 20ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 200V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AB, SMC
Package ng Tagabigay ng Device : DO-214AB (SMC)
Operating temperatura - Junction : -55°C ~ 175°C

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