IXFX26N60Q Pagpepresyo (USD) [489pcs Stock]
- 1 pcs$6.98509
- Bilang ng Bahagi:
- IXFX26N60Q
- Tagagawa:
- IXYS
- Detalyadong Paglalarawan:
- MOSFET N-CH 600V 26A PLUS 247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - IGBTs - Mga Module, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - Programmable Unijunction, Diode - Zener - Arrays, Diode - Zener - Single and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in IXYS IXFX26N60Q electronic components. IXFX26N60Q can be shipped within 24 hours after order. If you have any demands for IXFX26N60Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFX26N60Q Mga katangian ng produkto
Bilang ng Bahagi :
IXFX26N60Q
Tagagawa :
IXYS
Paglalarawan :
MOSFET N-CH 600V 26A PLUS 247
Serye :
HiPerFET™
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
26A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
250 mOhm @ 13A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5100pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
360W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
PLUS247™-3
Pakete / Kaso :
TO-247-3
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