Bilang ng Bahagi :
APTMC120AM55CT1AG
Tagagawa :
Microsemi Corporation
Paglalarawan :
MOSFET 2N-CH 1200V 55A SP1
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
55A (Tc)
Rds On (Max) @ Id, Vgs :
49 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
2.2V @ 2mA (Typ)
Gate Charge (Qg) (Max) @ Vgs :
98nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 1000V
Kapangyarihan - Max :
250W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
Chassis Mount
Package ng Tagabigay ng Device :
SP1