[9840pcs Stock]
- Bilang ng Bahagi:
- 2SA965-O(TE6,F,M)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS PNP 800MA 120V TO226-3.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Diode - Zener - Single, Thyristors - SCR - Mga Module, Thyristors - Mga TRIAC, Diode - Rectifiers - Single, Transistor - Espesyal na Pakay, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Thyristors - DIACs, SIDACs ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage 2SA965-O(TE6,F,M) electronic components. 2SA965-O(TE6,F,M) can be shipped within 24 hours after order. If you have any demands for 2SA965-O(TE6,F,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SA965-O(TE6,F,M) Mga katangian ng produkto
Bilang ng Bahagi :
2SA965-O(TE6,F,M)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS PNP 800MA 120V TO226-3
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng Transistor :
PNP
Kasalukuyang - Kolektor (Ic) (Max) :
800mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
120V
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
80 @ 100mA, 5V
Kapangyarihan - Max :
900mW
Dalas - Paglilipat :
120MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-226-3, TO-92-3 Long Body
Package ng Tagabigay ng Device :
LSTM
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