TK31J60W,S1VQ Pagpepresyo (USD) [11067pcs Stock]
- 1 pcs$4.09851
- 25 pcs$3.35902
- 100 pcs$3.03127
- 500 pcs$2.53971
- Bilang ng Bahagi:
- TK31J60W,S1VQ
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N CH 600V 30.8A TO-3PN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Espesyal na Pakay, Diode - Rectifiers - Arrays, Transistor - Mga FET, MOSFET - Arrays, Transistor - Programmable Unijunction, Mga Transistor - JFET, Mga Transistor - Bipolar (BJT) - RF and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK31J60W,S1VQ electronic components. TK31J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK31J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31J60W,S1VQ Mga katangian ng produkto
Bilang ng Bahagi :
TK31J60W,S1VQ
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N CH 600V 30.8A TO-3PN
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
30.8A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3000pF @ 300V
Tampok ng FET :
Super Junction
Power Dissipation (Max) :
230W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-3P(N)
Pakete / Kaso :
TO-3P-3, SC-65-3
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