GeneSiC Semiconductor - MBR600200CT

KEY Part #: K6468492

MBR600200CT Pagpepresyo (USD) [729pcs Stock]

  • 1 pcs$63.61256
  • 25 pcs$37.09736

Bilang ng Bahagi:
MBR600200CT
Tagagawa:
GeneSiC Semiconductor
Detalyadong Paglalarawan:
DIODE SCHOTTKY 200V 300A 2 TOWER. Schottky Diodes & Rectifiers 150V 600A Forward
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Arrays, Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
Kumpetensyang Pakinabang:
We specialize in GeneSiC Semiconductor MBR600200CT electronic components. MBR600200CT can be shipped within 24 hours after order. If you have any demands for MBR600200CT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MBR600200CT Mga katangian ng produkto

Bilang ng Bahagi : MBR600200CT
Tagagawa : GeneSiC Semiconductor
Paglalarawan : DIODE SCHOTTKY 200V 300A 2 TOWER
Serye : -
Katayuan ng Bahagi : Active
Pag-configure ng Diode : 1 Pair Common Cathode
Uri ng Diode : Schottky
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average Rectified (Io) (bawat Diode) : 300A
Boltahe - Ipasa (Vf) (Max) @ Kung : 920mV @ 300A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Kasalukuyang - Reverse Leakage @ Vr : 3mA @ 200V
Operating temperatura - Junction : -55°C ~ 150°C
Uri ng Pag-mount : Chassis Mount
Pakete / Kaso : Twin Tower
Package ng Tagabigay ng Device : Twin Tower
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