Taiwan Semiconductor Corporation - US1MHM2G

KEY Part #: K6426703

US1MHM2G Pagpepresyo (USD) [1279712pcs Stock]

  • 1 pcs$0.02890

Bilang ng Bahagi:
US1MHM2G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 1A DO214AC. Rectifiers 75ns 1A 1000V HiEff Recov Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Transistor - Mga FET, MOSFET - Arrays, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - JFET, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistor - IGBTs - Arrays and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation US1MHM2G electronic components. US1MHM2G can be shipped within 24 hours after order. If you have any demands for US1MHM2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1MHM2G Mga katangian ng produkto

Bilang ng Bahagi : US1MHM2G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 1A DO214AC
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : -
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.7V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 1000V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 150°C

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