STI20N60M2-EP Pagpepresyo (USD) [72767pcs Stock]
- 1 pcs$0.53734
- 1,000 pcs$0.48015
- Bilang ng Bahagi:
- STI20N60M2-EP
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- MOSFET N-CHANNEL 600V 13A TO220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single, Mga module ng Power driver, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction and Thyristors - Mga TRIAC ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STI20N60M2-EP electronic components. STI20N60M2-EP can be shipped within 24 hours after order. If you have any demands for STI20N60M2-EP, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STI20N60M2-EP Mga katangian ng produkto
Bilang ng Bahagi :
STI20N60M2-EP
Tagagawa :
STMicroelectronics
Paglalarawan :
MOSFET N-CHANNEL 600V 13A TO220
Serye :
MDmesh™ M2-EP
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
13A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
278 mOhm @ 6.5A, 10V
Vgs (th) (Max) @ Id :
4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
21.7nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
787pF @ 100V
Tampok ng FET :
-
Power Dissipation (Max) :
110W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220
Pakete / Kaso :
TO-220-3
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