HERF1008GAHC0G Pagpepresyo (USD) [90796pcs Stock]
- 1 pcs$0.43064
- Bilang ng Bahagi:
- HERF1008GAHC0G
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- DIODE HIGH EFFICIENT. Rectifiers 10A,1000V, G.P. HIGH EFFICIENT DUAL RECTIFIER, ISOLATED
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Mga FET, MOSFET - Single, Mga Transistor - Bipolar (BJT) - RF, Mga Transistor - FET, MOSFET - RF, Diode - Zener - Single, Mga Transistor - JFET, Thyristors - Mga SCR and Diode - Rectifiers - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation HERF1008GAHC0G electronic components. HERF1008GAHC0G can be shipped within 24 hours after order. If you have any demands for HERF1008GAHC0G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HERF1008GAHC0G Mga katangian ng produkto
Bilang ng Bahagi :
HERF1008GAHC0G
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
DIODE HIGH EFFICIENT
Serye :
Automotive, AEC-Q101
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
1000V
Kasalukuyang - Average na Rectified (Io) :
10A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.7V @ 5A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
80ns
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 1000V
Capacitance @ Vr, F :
40pF @ 4V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
TO-220-3 Full Pack, Isolated Tab
Package ng Tagabigay ng Device :
ITO-220AB
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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C3D08060G
Cree/Wolfspeed
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