DMN2022UNS-7 Pagpepresyo (USD) [347340pcs Stock]
- 1 pcs$0.10649
- 2,000 pcs$0.09462
- Bilang ng Bahagi:
- DMN2022UNS-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 20V POWERDI3333-8.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistors - IGBTs - Single, Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Programmable Unijunction, Diode - Zener - Arrays, Transistor - Mga FET, MOSFET - Single, Diode - Mga Rectifier ng Bridge and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated DMN2022UNS-7 electronic components. DMN2022UNS-7 can be shipped within 24 hours after order. If you have any demands for DMN2022UNS-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN2022UNS-7 Mga katangian ng produkto
Bilang ng Bahagi :
DMN2022UNS-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
MOSFET 2 N-CH 20V POWERDI3333-8
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual) Common Drain
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
20V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10.7A (Ta)
Rds On (Max) @ Id, Vgs :
10.8 mOhm @ 4A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1870pF @ 10V
Kapangyarihan - Max :
1.2W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PowerDI3333-8
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