TSM200N03DPQ33 RGG Pagpepresyo (USD) [536583pcs Stock]
- 1 pcs$0.06893
- Bilang ng Bahagi:
- TSM200N03DPQ33 RGG
- Tagagawa:
- Taiwan Semiconductor Corporation
- Detalyadong Paglalarawan:
- MOSFET 2 N-CH 30V 20A 8PDFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga TRIAC, Mga module ng Power driver, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Arrays, Diode - RF, Mga Transistor - FET, MOSFET - RF and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Taiwan Semiconductor Corporation TSM200N03DPQ33 RGG electronic components. TSM200N03DPQ33 RGG can be shipped within 24 hours after order. If you have any demands for TSM200N03DPQ33 RGG, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TSM200N03DPQ33 RGG Mga katangian ng produkto
Bilang ng Bahagi :
TSM200N03DPQ33 RGG
Tagagawa :
Taiwan Semiconductor Corporation
Paglalarawan :
MOSFET 2 N-CH 30V 20A 8PDFN
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Dual)
Tampok ng FET :
Standard
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Tc)
Rds On (Max) @ Id, Vgs :
20 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
345pF @ 25V
Kapangyarihan - Max :
20W
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerWDFN
Package ng Tagabigay ng Device :
8-PDFN (3x3)
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