Vishay Semiconductor Diodes Division - BYVB32-200HE3/45

KEY Part #: K6479199

BYVB32-200HE3/45 Pagpepresyo (USD) [97661pcs Stock]

  • 1 pcs$0.40037
  • 1,000 pcs$0.34323

Bilang ng Bahagi:
BYVB32-200HE3/45
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE ARRAY GP 200V 18A TO263AB. Rectifiers 200 Volt 18A 25ns Dual Common Cathode
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - FET, MOSFET - RF, Mga module ng Power driver, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Zener - Arrays and Transistor - Bipolar (BJT) - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BYVB32-200HE3/45 electronic components. BYVB32-200HE3/45 can be shipped within 24 hours after order. If you have any demands for BYVB32-200HE3/45, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYVB32-200HE3/45 Mga katangian ng produkto

Bilang ng Bahagi : BYVB32-200HE3/45
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE ARRAY GP 200V 18A TO263AB
Serye : -
Katayuan ng Bahagi : Active
Pag-configure ng Diode : 1 Pair Common Cathode
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average Rectified (Io) (bawat Diode) : 18A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.15V @ 20A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 25ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 200V
Operating temperatura - Junction : -65°C ~ 150°C
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB

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