TK17N65W,S1F Pagpepresyo (USD) [26492pcs Stock]
- 1 pcs$1.70992
- 30 pcs$1.37440
- 120 pcs$1.25217
- 510 pcs$0.96195
- 1,020 pcs$0.81128
- Bilang ng Bahagi:
- TK17N65W,S1F
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 650V 17.3A T0247.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Arrays, Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Rectifiers - Arrays, Thyristors - SCR - Mga Module, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Mga Rectifier ng Bridge and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK17N65W,S1F electronic components. TK17N65W,S1F can be shipped within 24 hours after order. If you have any demands for TK17N65W,S1F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK17N65W,S1F Mga katangian ng produkto
Bilang ng Bahagi :
TK17N65W,S1F
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 650V 17.3A T0247
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
650V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
17.3A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
200 mOhm @ 8.7A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 900µA
Gate Charge (Qg) (Max) @ Vgs :
45nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
1800pF @ 300V
Tampok ng FET :
-
Power Dissipation (Max) :
165W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247
Pakete / Kaso :
TO-247-3
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