TK12E80W,S1X Pagpepresyo (USD) [28338pcs Stock]
- 1 pcs$1.59974
- 50 pcs$1.28711
- 100 pcs$1.17266
- 500 pcs$0.90087
- 1,000 pcs$0.75977
- Bilang ng Bahagi:
- TK12E80W,S1X
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 11.5A TO220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Arrays, Mga Transistor - Bipolar (BJT) - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs and Diode - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage TK12E80W,S1X electronic components. TK12E80W,S1X can be shipped within 24 hours after order. If you have any demands for TK12E80W,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12E80W,S1X Mga katangian ng produkto
Bilang ng Bahagi :
TK12E80W,S1X
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET N-CH 800V 11.5A TO220
Serye :
DTMOSIV
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
11.5A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
450 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
4V @ 570µA
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 300V
Tampok ng FET :
-
Power Dissipation (Max) :
165W (Tc)
Temperatura ng pagpapatakbo :
150°C
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220
Pakete / Kaso :
TO-220-3
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