Taiwan Semiconductor Corporation - TPAR3D S1G

KEY Part #: K6444626

TPAR3D S1G Pagpepresyo (USD) [373472pcs Stock]

  • 1 pcs$0.09904

Bilang ng Bahagi:
TPAR3D S1G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE AVALANCHE 200V 3A TO277A. Rectifiers 95ns, 3A, 200V, Fast Recovery Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - DIACs, SIDACs, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCR - Mga Module, Diode - RF, Transistors - IGBTs - Single, Transistor - IGBTs - Arrays and Transistor - Programmable Unijunction ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation TPAR3D S1G electronic components. TPAR3D S1G can be shipped within 24 hours after order. If you have any demands for TPAR3D S1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPAR3D S1G Mga katangian ng produkto

Bilang ng Bahagi : TPAR3D S1G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE AVALANCHE 200V 3A TO277A
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Avalanche
Boltahe - DC Reverse (Vr) (Max) : 200V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.55V @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 120ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 200V
Capacitance @ Vr, F : 58pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-277, 3-PowerDFN
Package ng Tagabigay ng Device : TO-277A (SMPC)
Operating temperatura - Junction : -55°C ~ 175°C

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