Nexperia USA Inc. - PMEG3010AESBYL

KEY Part #: K6456506

PMEG3010AESBYL Pagpepresyo (USD) [1555320pcs Stock]

  • 1 pcs$0.02378
  • 10,000 pcs$0.02159
  • 30,000 pcs$0.02025
  • 50,000 pcs$0.01800

Bilang ng Bahagi:
PMEG3010AESBYL
Tagagawa:
Nexperia USA Inc.
Detalyadong Paglalarawan:
DIODE SCHOTTKY 30V 1A SOD993. Schottky Diodes & Rectifiers 1A MEGA Schottky Barrier Rectifier
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Arrays, Transistor - Programmable Unijunction, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in Nexperia USA Inc. PMEG3010AESBYL electronic components. PMEG3010AESBYL can be shipped within 24 hours after order. If you have any demands for PMEG3010AESBYL, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMEG3010AESBYL Mga katangian ng produkto

Bilang ng Bahagi : PMEG3010AESBYL
Tagagawa : Nexperia USA Inc.
Paglalarawan : DIODE SCHOTTKY 30V 1A SOD993
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Schottky
Boltahe - DC Reverse (Vr) (Max) : 30V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 480mV @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 3.5ns
Kasalukuyang - Reverse Leakage @ Vr : 255µA @ 20V
Capacitance @ Vr, F : 86pF @ 1V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : 2-XDFN
Package ng Tagabigay ng Device : DSN1006-2
Operating temperatura - Junction : 150°C (Max)

Maaari ka ring Makisalamuha sa
  • DSEP8-03AS

    IXYS

    DIODE GEN PURP 300V 8A TO252AA.

  • VS-16EDH02HM3/I

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 16A TO263AC. Rectifiers Single 16A 200V FRED Pt AEC-Q101

  • FESB8BTHE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 100V 8A TO263AB. Rectifiers 8.0A 100 Volt 35ns 125 Amp IFSM

  • UGB8CTHE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 150V 8A TO263AB. Rectifiers 8.0A 150 Volt 20ns 150 Amp IFSM

  • UGB8DTHE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 200V 8A TO263AB. Rectifiers 8.0A 200 Volt 20ns 150 Amp IFSM

  • UGB8ATHE3/81

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 50V 8A TO263AB. Rectifiers 8.0A 50 Volt 20ns 150 Amp IFSM