Vishay Semiconductor Diodes Division - BYG10MHE3_A/H

KEY Part #: K6439702

BYG10MHE3_A/H Pagpepresyo (USD) [597046pcs Stock]

  • 1 pcs$0.06195

Bilang ng Bahagi:
BYG10MHE3_A/H
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE AVALANCHE 1KV 1.5A DO214AC. Rectifiers 1.5A,1000V,STD,AVAL AEC-Q101 Qualified
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - Bipolar (BJT) - Single, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Mga Transistor - FET, MOSFET - RF, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays and Diode - RF ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division BYG10MHE3_A/H electronic components. BYG10MHE3_A/H can be shipped within 24 hours after order. If you have any demands for BYG10MHE3_A/H, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10MHE3_A/H Mga katangian ng produkto

Bilang ng Bahagi : BYG10MHE3_A/H
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE AVALANCHE 1KV 1.5A DO214AC
Serye : Automotive, AEC-Q101
Katayuan ng Bahagi : Active
Uri ng Diode : Avalanche
Boltahe - DC Reverse (Vr) (Max) : 1000V
Kasalukuyang - Average na Rectified (Io) : 1.5A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.15V @ 1.5A
Bilis : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 4µs
Kasalukuyang - Reverse Leakage @ Vr : 1µA @ 1000V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AC, SMA
Package ng Tagabigay ng Device : DO-214AC (SMA)
Operating temperatura - Junction : -55°C ~ 150°C

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