ON Semiconductor - FCP190N60

KEY Part #: K6398964

FCP190N60 Pagpepresyo (USD) [23380pcs Stock]

  • 1 pcs$1.76280
  • 10 pcs$1.57550
  • 100 pcs$1.29191
  • 500 pcs$0.99249
  • 1,000 pcs$0.83704

Bilang ng Bahagi:
FCP190N60
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
MOSFET N-CH 600V TO220-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Transistor - Bipolar (BJT) - Single, Transistor - Espesyal na Pakay, Diode - Rectifiers - Single and Diode - RF ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor FCP190N60 electronic components. FCP190N60 can be shipped within 24 hours after order. If you have any demands for FCP190N60, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FCP190N60 Mga katangian ng produkto

Bilang ng Bahagi : FCP190N60
Tagagawa : ON Semiconductor
Paglalarawan : MOSFET N-CH 600V TO220-3
Serye : SuperFET® II
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 600V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 20.2A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 199 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 74nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2950pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 208W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 150°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220-3
Pakete / Kaso : TO-220-3

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