HN4B01JE(TE85L,F) Pagpepresyo (USD) [1309823pcs Stock]
- 1 pcs$0.02824
- Bilang ng Bahagi:
- HN4B01JE(TE85L,F)
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- TRANS NPN/PNP 50V 0.15A ESV PLN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Mga module ng Power driver, Thyristors - Mga SCR, Diode - Zener - Arrays, Thyristors - SCR - Mga Module, Diode - RF, Transistor - Bipolar (BJT) - Single and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage HN4B01JE(TE85L,F) electronic components. HN4B01JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4B01JE(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4B01JE(TE85L,F) Mga katangian ng produkto
Bilang ng Bahagi :
HN4B01JE(TE85L,F)
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
TRANS NPN/PNP 50V 0.15A ESV PLN
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
NPN, PNP (Emitter Coupled)
Kasalukuyang - Kolektor (Ic) (Max) :
150mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Kasalukuyang - Collector Cutoff (Max) :
100nA (ICBO)
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
120 @ 10MA, 100MA
Kapangyarihan - Max :
100mW
Dalas - Paglilipat :
80MHz
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-553
Package ng Tagabigay ng Device :
ESV
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