Infineon Technologies - IPD30N06S2L23ATMA3

KEY Part #: K6416705

IPD30N06S2L23ATMA3 Pagpepresyo (USD) [217041pcs Stock]

  • 1 pcs$0.17042
  • 2,500 pcs$0.16226

Bilang ng Bahagi:
IPD30N06S2L23ATMA3
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
MOSFET N-CH 55V 30A TO252-3.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
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Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IPD30N06S2L23ATMA3 electronic components. IPD30N06S2L23ATMA3 can be shipped within 24 hours after order. If you have any demands for IPD30N06S2L23ATMA3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD30N06S2L23ATMA3 Mga katangian ng produkto

Bilang ng Bahagi : IPD30N06S2L23ATMA3
Tagagawa : Infineon Technologies
Paglalarawan : MOSFET N-CH 55V 30A TO252-3
Serye : OptiMOS™
Katayuan ng Bahagi : Active
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 30A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 23 mOhm @ 22A, 10V
Vgs (th) (Max) @ Id : 2V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 42nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1091pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 100W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Surface Mount
Package ng Tagabigay ng Device : PG-TO252-3-11
Pakete / Kaso : TO-252-3, DPak (2 Leads + Tab), SC-63

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