SBRT4M30LP-7 Pagpepresyo (USD) [355350pcs Stock]
- 1 pcs$0.10461
- 3,000 pcs$0.10409
- 6,000 pcs$0.09691
- 15,000 pcs$0.09332
- Bilang ng Bahagi:
- SBRT4M30LP-7
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- DIODE SBR 30V 4A 8DFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - RF, Transistor - Bipolar (BJT) - Arrays, Diode - Rectifiers - Single, Transistor - Programmable Unijunction, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - DIACs, SIDACs and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated SBRT4M30LP-7 electronic components. SBRT4M30LP-7 can be shipped within 24 hours after order. If you have any demands for SBRT4M30LP-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SBRT4M30LP-7 Mga katangian ng produkto
Bilang ng Bahagi :
SBRT4M30LP-7
Tagagawa :
Diodes Incorporated
Paglalarawan :
DIODE SBR 30V 4A 8DFN
Serye :
TrenchSBR
Katayuan ng Bahagi :
Active
Uri ng Diode :
Super Barrier
Boltahe - DC Reverse (Vr) (Max) :
30V
Kasalukuyang - Average na Rectified (Io) :
4A
Boltahe - Ipasa (Vf) (Max) @ Kung :
510mV @ 4A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
30ns
Kasalukuyang - Reverse Leakage @ Vr :
60µA @ 30V
Capacitance @ Vr, F :
150pF @ 30V, 1MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerUDFN
Package ng Tagabigay ng Device :
U-DFN3030-8
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
Maaari ka ring Makisalamuha sa
-
-
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CRS03(TE85L,Q,M)
Toshiba Semiconductor and Storage
DIODE SCHOTTKY 30V 1A SFLAT. Schottky Diodes & Rectifiers SBD 1A VRRM=30V VFM=0.45V
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