2SJ649-AZ Pagpepresyo (USD) [53747pcs Stock]
- 1 pcs$0.79857
- Bilang ng Bahagi:
- 2SJ649-AZ
- Tagagawa:
- Renesas Electronics America
- Detalyadong Paglalarawan:
- MOSFET P-CH 60V 20A TO-220.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Mga Module, Diode - RF, Transistor - Mga FET, MOSFET - Arrays, Diode - Mga Rectifier ng Bridge, Thyristors - DIACs, SIDACs, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Renesas Electronics America 2SJ649-AZ electronic components. 2SJ649-AZ can be shipped within 24 hours after order. If you have any demands for 2SJ649-AZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
2SJ649-AZ Mga katangian ng produkto
Bilang ng Bahagi :
2SJ649-AZ
Tagagawa :
Renesas Electronics America
Paglalarawan :
MOSFET P-CH 60V 20A TO-220
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
20A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
48 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1900pF @ 10V
Tampok ng FET :
-
Power Dissipation (Max) :
2W (Ta), 25W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220 Isolated Tab
Pakete / Kaso :
TO-220-3 Isolated Tab
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