IRF60B217 Pagpepresyo (USD) [54371pcs Stock]
- 1 pcs$0.78185
- 10 pcs$0.69112
- 100 pcs$0.54625
- 500 pcs$0.42364
- 1,000 pcs$0.31637
- Bilang ng Bahagi:
- IRF60B217
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 60V 60A.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - JFET, Thyristors - Mga SCR, Transistor - Bipolar (BJT) - Single, Pre-Biased, Transistor - IGBTs - Mga Module, Transistor - Espesyal na Pakay, Mga Transistor - FET, MOSFET - RF, Thyristors - SCR - Mga Module and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF60B217 electronic components. IRF60B217 can be shipped within 24 hours after order. If you have any demands for IRF60B217, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF60B217 Mga katangian ng produkto
Bilang ng Bahagi :
IRF60B217
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 60V 60A
Serye :
StrongIRFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
60A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
9 mOhm @ 36A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
66nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2230pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
83W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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