AUIRLU3110Z Pagpepresyo (USD) [2017pcs Stock]
- 75 pcs$0.73586
- Bilang ng Bahagi:
- AUIRLU3110Z
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- MOSFET N-CH 100V 63A IPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - SCR - Mga Module, Transistor - IGBTs - Mga Module, Diode - Mga Rectifier ng Bridge, Thyristors - Mga TRIAC, Diode - Zener - Single, Transistor - Bipolar (BJT) - Single, Transistor - Bipolar (BJT) - Arrays and Transistor - IGBTs - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies AUIRLU3110Z electronic components. AUIRLU3110Z can be shipped within 24 hours after order. If you have any demands for AUIRLU3110Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
AUIRLU3110Z Mga katangian ng produkto
Bilang ng Bahagi :
AUIRLU3110Z
Tagagawa :
Infineon Technologies
Paglalarawan :
MOSFET N-CH 100V 63A IPAK
Serye :
HEXFET®
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
42A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
-
Rds On (Max) @ Id, Vgs :
14 mOhm @ 38A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
48nC @ 4.5V
Vgs (Max) :
-
Input Capacitance (Ciss) (Max) @ Vds :
3980pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
140W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
I-PAK
Pakete / Kaso :
TO-251-3 Short Leads, IPak, TO-251AA
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