1N5407G-T Pagpepresyo (USD) [293pcs Stock]
- 1,200 pcs$0.03002
- 2,400 pcs$0.02610
- 6,000 pcs$0.02349
- 12,000 pcs$0.02088
- 30,000 pcs$0.01958
- 60,000 pcs$0.01736
- Bilang ng Bahagi:
- 1N5407G-T
- Tagagawa:
- Diodes Incorporated
- Detalyadong Paglalarawan:
- DIODE GEN PURP 800V 3A DO201AD. Rectifiers 3.0A 800V
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Mga Transistor - JFET, Transistor - IGBTs - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Thyristors - SCR - Mga Module, Transistor - Espesyal na Pakay, Thyristors - DIACs, SIDACs and Transistor - Bipolar (BJT) - Single ...
- Kumpetensyang Pakinabang:
- We specialize in Diodes Incorporated 1N5407G-T electronic components. 1N5407G-T can be shipped within 24 hours after order. If you have any demands for 1N5407G-T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5407G-T Mga katangian ng produkto
Bilang ng Bahagi :
1N5407G-T
Tagagawa :
Diodes Incorporated
Paglalarawan :
DIODE GEN PURP 800V 3A DO201AD
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
800V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.1V @ 3A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
2µs
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 800V
Capacitance @ Vr, F :
40pF @ 4V, 1MHz
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
DO-201AD, Axial
Package ng Tagabigay ng Device :
DO-201AD
Operating temperatura - Junction :
-65°C ~ 150°C
Pinakabagong Balita
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