Infineon Technologies - IDH10G120C5XKSA1

KEY Part #: K6442453

IDH10G120C5XKSA1 Pagpepresyo (USD) [10390pcs Stock]

  • 1 pcs$3.93545
  • 10 pcs$3.55513
  • 100 pcs$2.94326
  • 500 pcs$2.56293
  • 1,000 pcs$2.23223

Bilang ng Bahagi:
IDH10G120C5XKSA1
Tagagawa:
Infineon Technologies
Detalyadong Paglalarawan:
DIODE SCHOTTKY 1200V 10A TO220-2. Schottky Diodes & Rectifiers SIC CHIP/DISCRETE
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single, Diode - RF and Transistor - Espesyal na Pakay ...
Kumpetensyang Pakinabang:
We specialize in Infineon Technologies IDH10G120C5XKSA1 electronic components. IDH10G120C5XKSA1 can be shipped within 24 hours after order. If you have any demands for IDH10G120C5XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IDH10G120C5XKSA1 Mga katangian ng produkto

Bilang ng Bahagi : IDH10G120C5XKSA1
Tagagawa : Infineon Technologies
Paglalarawan : DIODE SCHOTTKY 1200V 10A TO220-2
Serye : CoolSiC™
Katayuan ng Bahagi : Active
Uri ng Diode : Silicon Carbide Schottky
Boltahe - DC Reverse (Vr) (Max) : 1200V
Kasalukuyang - Average na Rectified (Io) : 10A (DC)
Boltahe - Ipasa (Vf) (Max) @ Kung : 1.8V @ 10A
Bilis : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Kasalukuyang - Reverse Leakage @ Vr : 62µA @ 1200V
Capacitance @ Vr, F : 525pF @ 1V, 1MHz
Uri ng Pag-mount : Through Hole
Pakete / Kaso : TO-220-2
Package ng Tagabigay ng Device : PG-TO220-2-1
Operating temperatura - Junction : -55°C ~ 175°C

Maaari ka ring Makisalamuha sa
  • RJU6052SDPD-E0#J2

    Renesas Electronics America

    DIODE GEN PURP 600V 20A TO252. Diodes - General Purpose, Power, Switching FRD 600V/10A/25ns Trr/TO-252

  • RJU4352SDPD-E0#J2

    Renesas Electronics America

    DIODE GEN PURP 430V 20A TO252. Diodes - General Purpose, Power, Switching FRD 430V/20A/23ns Trr/TO-252

  • RJU3052SDPD-E0#J2

    Renesas Electronics America

    DIODE GEN PURP 360V 20A TO252. Diodes - General Purpose, Power, Switching FRD 360V/20A/40ns Trr/TO-252

  • UD0506T-TL-H

    ON Semiconductor

    DIODE GEN PURP 600V 5A TPFA. Diodes - General Purpose, Power, Switching FRD 5A 600V LOW VF

  • RD0306T-TL-H

    ON Semiconductor

    DIODE GEN PURP 600V 3A TPFA.

  • STPS20M100SFP

    STMicroelectronics

    DIODE SCHOTTKY 100V 20A TO220FP.