NSBA115TDP6T5G Pagpepresyo (USD) [957720pcs Stock]
- 1 pcs$0.03881
- 8,000 pcs$0.03862
- Bilang ng Bahagi:
- NSBA115TDP6T5G
- Tagagawa:
- ON Semiconductor
- Detalyadong Paglalarawan:
- TRANS 2PNP PREBIAS 0.408W SOT963.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Programmable Unijunction, Thyristors - Mga SCR, Mga Transistor - FET, MOSFET - RF, Thyristors - DIACs, SIDACs, Thyristors - SCR - Mga Module, Transistor - Mga FET, MOSFET - Arrays, Diode - Zener - Arrays and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in ON Semiconductor NSBA115TDP6T5G electronic components. NSBA115TDP6T5G can be shipped within 24 hours after order. If you have any demands for NSBA115TDP6T5G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NSBA115TDP6T5G Mga katangian ng produkto
Bilang ng Bahagi :
NSBA115TDP6T5G
Tagagawa :
ON Semiconductor
Paglalarawan :
TRANS 2PNP PREBIAS 0.408W SOT963
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Transistor :
2 PNP - Pre-Biased (Dual)
Kasalukuyang - Kolektor (Ic) (Max) :
100mA
Boltahe - Pagkalugi ng kolektor ng Emitter (Max) :
50V
Resistor - Base (R1) :
100 kOhms
Resistor - Emitter Base (R2) :
-
DC Kasalukuyang Gain (hFE) (Min) @ Ic, Vce :
160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 5mA, 10mA
Kasalukuyang - Collector Cutoff (Max) :
500nA
Dalas - Paglilipat :
-
Kapangyarihan - Max :
408mW
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
SOT-963
Package ng Tagabigay ng Device :
SOT-963
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