IRF100P219XKMA1 Pagpepresyo (USD) [11574pcs Stock]
- 1 pcs$3.56086
- Bilang ng Bahagi:
- IRF100P219XKMA1
- Tagagawa:
- Infineon Technologies
- Detalyadong Paglalarawan:
- TRENCHMOSFETS.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga TRIAC, Transistor - Espesyal na Pakay, Transistor - Mga FET, MOSFET - Single, Diode - Mga Rectifier ng Bridge, Diode - Rectifiers - Arrays, Thyristors - Mga SCR and Mga module ng Power driver ...
- Kumpetensyang Pakinabang:
- We specialize in Infineon Technologies IRF100P219XKMA1 electronic components. IRF100P219XKMA1 can be shipped within 24 hours after order. If you have any demands for IRF100P219XKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF100P219XKMA1 Mga katangian ng produkto
Bilang ng Bahagi :
IRF100P219XKMA1
Tagagawa :
Infineon Technologies
Paglalarawan :
TRENCHMOSFETS
Serye :
StrongIRFET™
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
100V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
-
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
12020pF @ 50V
Tampok ng FET :
-
Power Dissipation (Max) :
341W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 175°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-247AC
Pakete / Kaso :
TO-247-3
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