[12525pcs Stock]
- Bilang ng Bahagi:
- IRFBE30
- Tagagawa:
- Vishay Siliconix
- Detalyadong Paglalarawan:
- MOSFET N-CH 800V 4.1A TO-220AB.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Transistor - Espesyal na Pakay, Diode - Zener - Single, Transistor - Programmable Unijunction, Diode - Mga Rectifier ng Bridge, Diode - RF, Diode - Rectifiers - Single and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Siliconix IRFBE30 electronic components. IRFBE30 can be shipped within 24 hours after order. If you have any demands for IRFBE30, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFBE30 Mga katangian ng produkto
Bilang ng Bahagi :
IRFBE30
Tagagawa :
Vishay Siliconix
Paglalarawan :
MOSFET N-CH 800V 4.1A TO-220AB
Serye :
-
Katayuan ng Bahagi :
Obsolete
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
800V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
4.1A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3 Ohm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
125W (Tc)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Through Hole
Package ng Tagabigay ng Device :
TO-220AB
Pakete / Kaso :
TO-220-3
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