[2717pcs Stock]
- Bilang ng Bahagi:
- HAT2299WP-EL-E
- Tagagawa:
- Renesas Electronics America
- Detalyadong Paglalarawan:
- MOSFET N-CH WPAK.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Diode - Rectifiers - Arrays, Mga Transistor - JFET, Transistor - Bipolar (BJT) - Arrays, Pre-Biased, Mga Transistor - FET, MOSFET - RF, Transistor - Programmable Unijunction, Transistor - Mga FET, MOSFET - Arrays and Transistor - Bipolar (BJT) - Arrays ...
- Kumpetensyang Pakinabang:
- We specialize in Renesas Electronics America HAT2299WP-EL-E electronic components. HAT2299WP-EL-E can be shipped within 24 hours after order. If you have any demands for HAT2299WP-EL-E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HAT2299WP-EL-E Mga katangian ng produkto
Bilang ng Bahagi :
HAT2299WP-EL-E
Tagagawa :
Renesas Electronics America
Paglalarawan :
MOSFET N-CH WPAK
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
150V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
14A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 7A, 10V
Vgs (th) (Max) @ Id :
-
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
710pF @ 25V
Tampok ng FET :
-
Power Dissipation (Max) :
25W (Tc)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
8-WPAK
Pakete / Kaso :
8-PowerWDFN
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