Vishay Semiconductor Diodes Division - EGL41AHE3_A/I

KEY Part #: K6439303

EGL41AHE3_A/I Pagpepresyo (USD) [758794pcs Stock]

  • 1 pcs$0.04875

Bilang ng Bahagi:
EGL41AHE3_A/I
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 50V 1A DO213AB. Rectifiers 1A,50V,50NS AEC-Q101 Qualified
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Single, Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Mga Transistor - FET, MOSFET - RF, Diode - Iba't ibang Kakayahan (Varicaps, Varactors, Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays and Diode - Zener - Arrays ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division EGL41AHE3_A/I electronic components. EGL41AHE3_A/I can be shipped within 24 hours after order. If you have any demands for EGL41AHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

EGL41AHE3_A/I Mga katangian ng produkto

Bilang ng Bahagi : EGL41AHE3_A/I
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 50V 1A DO213AB
Serye : Automotive, AEC-Q101, Superectifier®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 50V
Kasalukuyang - Average na Rectified (Io) : 1A
Boltahe - Ipasa (Vf) (Max) @ Kung : 1V @ 1A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 50ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 50V
Capacitance @ Vr, F : 20pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-213AB, MELF (Glass)
Package ng Tagabigay ng Device : DO-213AB
Operating temperatura - Junction : -65°C ~ 175°C

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