1N5407-G Pagpepresyo (USD) [1221065pcs Stock]
- 1 pcs$0.03197
- 1,200 pcs$0.03181
- Bilang ng Bahagi:
- 1N5407-G
- Tagagawa:
- Comchip Technology
- Detalyadong Paglalarawan:
- DIODE GEN PURP 800V 3A DO201AD. Diodes - General Purpose, Power, Switching VR=800V, IO=3A
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga module ng Power driver, Thyristors - Mga TRIAC, Thyristors - SCR - Mga Module, Mga Transistor - Bipolar (BJT) - RF, Transistor - Programmable Unijunction and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Comchip Technology 1N5407-G electronic components. 1N5407-G can be shipped within 24 hours after order. If you have any demands for 1N5407-G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N5407-G Mga katangian ng produkto
Bilang ng Bahagi :
1N5407-G
Tagagawa :
Comchip Technology
Paglalarawan :
DIODE GEN PURP 800V 3A DO201AD
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
800V
Kasalukuyang - Average na Rectified (Io) :
3A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1V @ 3A
Bilis :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Kasalukuyang - Reverse Leakage @ Vr :
5µA @ 800V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Through Hole
Pakete / Kaso :
DO-201AD, Axial
Package ng Tagabigay ng Device :
DO-27 (DO-201AD)
Operating temperatura - Junction :
-65°C ~ 125°C
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