ES07B-GS18 Pagpepresyo (USD) [921392pcs Stock]
- 1 pcs$0.04236
- 10,000 pcs$0.04215
- 30,000 pcs$0.03876
- Bilang ng Bahagi:
- ES07B-GS18
- Tagagawa:
- Vishay Semiconductor Diodes Division
- Detalyadong Paglalarawan:
- DIODE GEN PURP 100V 1.2A DO219AB. Rectifiers 100 Volt 0.7A 25ns 30 Amp IFSM
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Rectifiers - Arrays, Mga Transistor - FET, MOSFET - RF, Transistor - IGBTs - Arrays, Mga Transistor - JFET, Transistor - Programmable Unijunction, Thyristors - SCR - Mga Module, Thyristors - Mga SCR and Transistor - Bipolar (BJT) - Single, Pre-Biased ...
- Kumpetensyang Pakinabang:
- We specialize in Vishay Semiconductor Diodes Division ES07B-GS18 electronic components. ES07B-GS18 can be shipped within 24 hours after order. If you have any demands for ES07B-GS18, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ES07B-GS18 Mga katangian ng produkto
Bilang ng Bahagi :
ES07B-GS18
Tagagawa :
Vishay Semiconductor Diodes Division
Paglalarawan :
DIODE GEN PURP 100V 1.2A DO219AB
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
100V
Kasalukuyang - Average na Rectified (Io) :
1.2A
Boltahe - Ipasa (Vf) (Max) @ Kung :
980mV @ 1A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Kasalukuyang - Reverse Leakage @ Vr :
10µA @ 100V
Capacitance @ Vr, F :
4pF @ 4V, 50MHz
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
DO-219AB
Package ng Tagabigay ng Device :
DO-219AB (SMF)
Operating temperatura - Junction :
-55°C ~ 150°C
Pinakabagong Balita
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ES07B-GS18
Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.2A DO219AB. Rectifiers 100 Volt 0.7A 25ns 30 Amp IFSM
-
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