Vishay Semiconductor Diodes Division - VS-2EGH01-M3/5BT

KEY Part #: K6427796

VS-2EGH01-M3/5BT Pagpepresyo (USD) [569175pcs Stock]

  • 1 pcs$0.06498

Bilang ng Bahagi:
VS-2EGH01-M3/5BT
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 2A DO214AA.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Mga Transistor - Bipolar (BJT) - RF, Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Diode - Mga Rectifier ng Bridge, Diode - Iba't ibang Kakayahan (Varicaps, Varactors and Mga module ng Power driver ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division VS-2EGH01-M3/5BT electronic components. VS-2EGH01-M3/5BT can be shipped within 24 hours after order. If you have any demands for VS-2EGH01-M3/5BT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-2EGH01-M3/5BT Mga katangian ng produkto

Bilang ng Bahagi : VS-2EGH01-M3/5BT
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 100V 2A DO214AA
Serye : FRED Pt®
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 2A
Boltahe - Ipasa (Vf) (Max) @ Kung : 900mV @ 2A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 23ns
Kasalukuyang - Reverse Leakage @ Vr : 2µA @ 100V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AA, SMB
Package ng Tagabigay ng Device : DO-214AA (SMBJ)
Operating temperatura - Junction : -55°C ~ 175°C

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