STTH4R06DEE-TR Pagpepresyo (USD) [150113pcs Stock]
- 1 pcs$0.26001
- 3,000 pcs$0.25872
- 6,000 pcs$0.24640
- Bilang ng Bahagi:
- STTH4R06DEE-TR
- Tagagawa:
- STMicroelectronics
- Detalyadong Paglalarawan:
- DIODE GEN PURP 600V 4A POWERFLAT. Diodes - General Purpose, Power, Switching Turbo 2 Ultrafst REC 4A 600V 1.0V VF 30ns
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Thyristors - Mga SCR, Transistor - IGBTs - Arrays, Thyristors - DIACs, SIDACs, Diode - Zener - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - JFET, Mga Transistor - FET, MOSFET - RF and Diode - Zener - Single ...
- Kumpetensyang Pakinabang:
- We specialize in STMicroelectronics STTH4R06DEE-TR electronic components. STTH4R06DEE-TR can be shipped within 24 hours after order. If you have any demands for STTH4R06DEE-TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STTH4R06DEE-TR Mga katangian ng produkto
Bilang ng Bahagi :
STTH4R06DEE-TR
Tagagawa :
STMicroelectronics
Paglalarawan :
DIODE GEN PURP 600V 4A POWERFLAT
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng Diode :
Standard
Boltahe - DC Reverse (Vr) (Max) :
600V
Kasalukuyang - Average na Rectified (Io) :
4A
Boltahe - Ipasa (Vf) (Max) @ Kung :
1.7V @ 4A
Bilis :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
50ns
Kasalukuyang - Reverse Leakage @ Vr :
3µA @ 600V
Capacitance @ Vr, F :
-
Uri ng Pag-mount :
Surface Mount
Pakete / Kaso :
8-PowerVDFN
Package ng Tagabigay ng Device :
PowerFlat™ (3.3x3.3)
Operating temperatura - Junction :
150°C (Max)
Pinakabagong Balita
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