Vishay Semiconductor Diodes Division - 1N4448WS-HE3-18

KEY Part #: K6439907

1N4448WS-HE3-18 Pagpepresyo (USD) [2750629pcs Stock]

  • 1 pcs$0.01419
  • 10,000 pcs$0.01412

Bilang ng Bahagi:
1N4448WS-HE3-18
Tagagawa:
Vishay Semiconductor Diodes Division
Detalyadong Paglalarawan:
DIODE GEN PURP 75V 150MA SOD323. Diodes - General Purpose, Power, Switching 100 Volt 150mA 4ns 500mA IFSM
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Mga Transistor - JFET, Transistor - Programmable Unijunction, Diode - Zener - Arrays, Thyristors - Mga SCR, Thyristors - SCR - Mga Module and Diode - Iba't ibang Kakayahan (Varicaps, Varactors ...
Kumpetensyang Pakinabang:
We specialize in Vishay Semiconductor Diodes Division 1N4448WS-HE3-18 electronic components. 1N4448WS-HE3-18 can be shipped within 24 hours after order. If you have any demands for 1N4448WS-HE3-18, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4448WS-HE3-18 Mga katangian ng produkto

Bilang ng Bahagi : 1N4448WS-HE3-18
Tagagawa : Vishay Semiconductor Diodes Division
Paglalarawan : DIODE GEN PURP 75V 150MA SOD323
Serye : -
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 75V
Kasalukuyang - Average na Rectified (Io) : 150mA
Boltahe - Ipasa (Vf) (Max) @ Kung : 720mV @ 5mA
Bilis : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Kasalukuyang - Reverse Leakage @ Vr : 5µA @ 75V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : SC-76, SOD-323
Package ng Tagabigay ng Device : SOD-323
Operating temperatura - Junction : -55°C ~ 150°C

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