Taiwan Semiconductor Corporation - ES3B M6G

KEY Part #: K6458064

ES3B M6G Pagpepresyo (USD) [838004pcs Stock]

  • 1 pcs$0.04414

Bilang ng Bahagi:
ES3B M6G
Tagagawa:
Taiwan Semiconductor Corporation
Detalyadong Paglalarawan:
DIODE GEN PURP 100V 3A DO214AB.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Mga module ng Power driver, Transistor - Mga FET, MOSFET - Arrays, Thyristors - SCR - Mga Module, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Diode - RF and Mga Transistor - Bipolar (BJT) - RF ...
Kumpetensyang Pakinabang:
We specialize in Taiwan Semiconductor Corporation ES3B M6G electronic components. ES3B M6G can be shipped within 24 hours after order. If you have any demands for ES3B M6G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ES3B M6G Mga katangian ng produkto

Bilang ng Bahagi : ES3B M6G
Tagagawa : Taiwan Semiconductor Corporation
Paglalarawan : DIODE GEN PURP 100V 3A DO214AB
Serye : -
Katayuan ng Bahagi : Not For New Designs
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 100V
Kasalukuyang - Average na Rectified (Io) : 3A
Boltahe - Ipasa (Vf) (Max) @ Kung : 950mV @ 3A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 35ns
Kasalukuyang - Reverse Leakage @ Vr : 10µA @ 100V
Capacitance @ Vr, F : 45pF @ 4V, 1MHz
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : DO-214AB, SMC
Package ng Tagabigay ng Device : DO-214AB (SMC)
Operating temperatura - Junction : -55°C ~ 150°C

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