Microsemi Corporation - APTGT100SK120D1G

KEY Part #: K6534082

[619pcs Stock]


    Bilang ng Bahagi:
    APTGT100SK120D1G
    Tagagawa:
    Microsemi Corporation
    Detalyadong Paglalarawan:
    IGBT 1200V 150A 520W D1.
    Manufacturer's standard lead time:
    Sa stock
    Buhay sa istante:
    Isang taon
    Chip Mula:
    Hong Kong
    RoHS:
    Paraan ng Pagbayad:
    Paraan ng pagpapadala:
    Mga Kategorya ng Pamilya:
    Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Diode - Mga Rectifier ng Bridge, Transistor - Bipolar (BJT) - Arrays, Transistor - IGBTs - Arrays, Transistor - IGBTs - Mga Module, Transistor - Espesyal na Pakay, Transistor - Bipolar (BJT) - Single, Pre-Biased, Mga Transistor - FET, MOSFET - RF and Diode - Zener - Arrays ...
    Kumpetensyang Pakinabang:
    We specialize in Microsemi Corporation APTGT100SK120D1G electronic components. APTGT100SK120D1G can be shipped within 24 hours after order. If you have any demands for APTGT100SK120D1G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    APTGT100SK120D1G Mga katangian ng produkto

    Bilang ng Bahagi : APTGT100SK120D1G
    Tagagawa : Microsemi Corporation
    Paglalarawan : IGBT 1200V 150A 520W D1
    Serye : -
    Katayuan ng Bahagi : Obsolete
    Uri ng IGBT : Trench Field Stop
    Pag-configure : Single
    Boltahe - Pagkalugi ng kolektor ng Emitter (Max) : 1200V
    Kasalukuyang - Kolektor (Ic) (Max) : 150A
    Kapangyarihan - Max : 520W
    Vce (on) (Max) @ Vge, Ic : 2.1V @ 15V, 100A
    Kasalukuyang - Collector Cutoff (Max) : 3mA
    Input Capacitance (Cies) @ Vce : 7nF @ 25V
    Input : Standard
    NTC Thermistor : No
    Temperatura ng pagpapatakbo : -40°C ~ 150°C (TJ)
    Uri ng Pag-mount : Chassis Mount
    Pakete / Kaso : D1
    Package ng Tagabigay ng Device : D1

    Maaari ka ring Makisalamuha sa
    • VS-GB90DA120U

      Vishay Semiconductor Diodes Division

      IGBT 1200V 149A 862W SOT-227.

    • APTGF350DA60G

      Microsemi Corporation

      IGBT 600V 430A 1562W SP6.

    • APTGT100A120D1G

      Microsemi Corporation

      IGBT MODULE TRENCH PHASE LEG D1.

    • APTGF90DU60TG

      Microsemi Corporation

      IGBT MODULE NPT DUAL SOURCE SP4.

    • APTGF90A60T1G

      Microsemi Corporation

      POWER MOD IGBT NPT PHASE LEG SP1.

    • APTGF75H120TG

      Microsemi Corporation

      POWER MODULE IGBT 1200V 75A SP4.