STMicroelectronics - STP80N6F6

KEY Part #: K6399017

STP80N6F6 Pagpepresyo (USD) [49221pcs Stock]

  • 1 pcs$0.75676
  • 10 pcs$0.67021
  • 100 pcs$0.52961
  • 500 pcs$0.41070
  • 1,000 pcs$0.30671

Bilang ng Bahagi:
STP80N6F6
Tagagawa:
STMicroelectronics
Detalyadong Paglalarawan:
MOSFET N-CH 60V TO-220.
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Espesyal na Pakay, Transistor - IGBTs - Arrays, Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Mga Rectifier ng Bridge, Mga Transistor - Bipolar (BJT) - RF, Transistor - Mga FET, MOSFET - Single, Thyristors - Mga SCR and Transistor - Bipolar (BJT) - Arrays, Pre-Biased ...
Kumpetensyang Pakinabang:
We specialize in STMicroelectronics STP80N6F6 electronic components. STP80N6F6 can be shipped within 24 hours after order. If you have any demands for STP80N6F6, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STP80N6F6 Mga katangian ng produkto

Bilang ng Bahagi : STP80N6F6
Tagagawa : STMicroelectronics
Paglalarawan : MOSFET N-CH 60V TO-220
Serye : Automotive, AEC-Q101, DeepGATE™, STripFET™ VI
Katayuan ng Bahagi : Obsolete
Uri ng FET : N-Channel
Teknolohiya : MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) : 60V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C : 110A (Tc)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 5.8 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 7480pF @ 25V
Tampok ng FET : -
Power Dissipation (Max) : 120W (Tc)
Temperatura ng pagpapatakbo : -55°C ~ 175°C (TJ)
Uri ng Pag-mount : Through Hole
Package ng Tagabigay ng Device : TO-220
Pakete / Kaso : TO-220-3

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