BSH111BKR Pagpepresyo (USD) [1579220pcs Stock]
- 1 pcs$0.02342
- 3,000 pcs$0.02131
- Bilang ng Bahagi:
- BSH111BKR
- Tagagawa:
- Nexperia USA Inc.
- Detalyadong Paglalarawan:
- MOSFET N-CH 55V SOT-23.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Zener - Arrays, Transistor - IGBTs - Arrays, Diode - RF, Diode - Zener - Single, Diode - Mga Rectifier ng Bridge, Mga module ng Power driver and Transistor - Espesyal na Pakay ...
- Kumpetensyang Pakinabang:
- We specialize in Nexperia USA Inc. BSH111BKR electronic components. BSH111BKR can be shipped within 24 hours after order. If you have any demands for BSH111BKR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSH111BKR Mga katangian ng produkto
Bilang ng Bahagi :
BSH111BKR
Tagagawa :
Nexperia USA Inc.
Paglalarawan :
MOSFET N-CH 55V SOT-23
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
N-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
55V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
210mA (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4.5V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 200mA, 4.5V
Vgs (th) (Max) @ Id :
1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
0.5nC @ 4.5V
Vgs (Max) :
±10V
Input Capacitance (Ciss) (Max) @ Vds :
30pF @ 30V
Tampok ng FET :
-
Power Dissipation (Max) :
302mW (Ta)
Temperatura ng pagpapatakbo :
-55°C ~ 150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
TO-236AB
Pakete / Kaso :
TO-236-3, SC-59, SOT-23-3
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