ON Semiconductor - ISL9R18120S3ST

KEY Part #: K6442681

ISL9R18120S3ST Pagpepresyo (USD) [59260pcs Stock]

  • 1 pcs$0.66949
  • 800 pcs$0.66616
  • 1,600 pcs$0.55196
  • 2,400 pcs$0.51389

Bilang ng Bahagi:
ISL9R18120S3ST
Tagagawa:
ON Semiconductor
Detalyadong Paglalarawan:
DIODE GEN PURP 1.2KV 18A TO263-2. Diodes - General Purpose, Power, Switching 18A 1200V Stealt
Manufacturer's standard lead time:
Sa stock
Buhay sa istante:
Isang taon
Chip Mula:
Hong Kong
RoHS:
Paraan ng Pagbayad:
Paraan ng pagpapadala:
Mga Kategorya ng Pamilya:
Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Mga FET, MOSFET - Arrays, Transistor - IGBTs - Mga Module, Thyristors - Mga SCR, Diode - RF, Transistor - Bipolar (BJT) - Arrays, Transistor - Programmable Unijunction, Thyristors - DIACs, SIDACs and Transistor - IGBTs - Arrays ...
Kumpetensyang Pakinabang:
We specialize in ON Semiconductor ISL9R18120S3ST electronic components. ISL9R18120S3ST can be shipped within 24 hours after order. If you have any demands for ISL9R18120S3ST, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

ISL9R18120S3ST Mga katangian ng produkto

Bilang ng Bahagi : ISL9R18120S3ST
Tagagawa : ON Semiconductor
Paglalarawan : DIODE GEN PURP 1.2KV 18A TO263-2
Serye : Stealth™
Katayuan ng Bahagi : Active
Uri ng Diode : Standard
Boltahe - DC Reverse (Vr) (Max) : 1200V
Kasalukuyang - Average na Rectified (Io) : 18A
Boltahe - Ipasa (Vf) (Max) @ Kung : 3.3V @ 18A
Bilis : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 300ns
Kasalukuyang - Reverse Leakage @ Vr : 100µA @ 1200V
Capacitance @ Vr, F : -
Uri ng Pag-mount : Surface Mount
Pakete / Kaso : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package ng Tagabigay ng Device : TO-263AB
Operating temperatura - Junction : -55°C ~ 175°C

Maaari ka ring Makisalamuha sa
  • GP2D010A120C

    Global Power Technologies Group

    DIODE SCHOTTKY 1.2KV 10A TO252-2.

  • GP2D006A065C

    Global Power Technologies Group

    DIODE SCHOTTKY 650V 6A TO252-2.

  • GP2D005A120C

    Global Power Technologies Group

    DIODE SCHOTTKY 1.2KV 5A DPAK-2.

  • GDP03S060C

    Global Power Technologies Group

    DIODE SCHOTTKY 600V 3A TO252-2.

  • LXA08B600

    Power Integrations

    DIODE GEN PURP 600V 8A TO263AB. Rectifiers X-Series 600V 8A Low Qrr

  • VS-MBRD320PBF

    Vishay Semiconductor Diodes Division

    DIODE SCHOTTKY 3A 20V DPAK.