BSM180D12P2C101 Pagpepresyo (USD) [224pcs Stock]
- 1 pcs$216.26708
- 10 pcs$208.25769
- Bilang ng Bahagi:
- BSM180D12P2C101
- Tagagawa:
- Rohm Semiconductor
- Detalyadong Paglalarawan:
- MOSFET 2N-CH 1200V 180A MODULE.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - IGBTs - Arrays, Mga Transistor - Bipolar (BJT) - RF, Transistor - Bipolar (BJT) - Arrays, Diode - Zener - Single, Transistors - IGBTs - Single, Transistor - Programmable Unijunction, Diode - Rectifiers - Arrays and Mga Transistor - FET, MOSFET - RF ...
- Kumpetensyang Pakinabang:
- We specialize in Rohm Semiconductor BSM180D12P2C101 electronic components. BSM180D12P2C101 can be shipped within 24 hours after order. If you have any demands for BSM180D12P2C101, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM180D12P2C101 Mga katangian ng produkto
Bilang ng Bahagi :
BSM180D12P2C101
Tagagawa :
Rohm Semiconductor
Paglalarawan :
MOSFET 2N-CH 1200V 180A MODULE
Serye :
-
Katayuan ng Bahagi :
Active
Uri ng FET :
2 N-Channel (Half Bridge)
Tampok ng FET :
Silicon Carbide (SiC)
Drain sa Source Voltage (Vdss) :
1200V (1.2kV)
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
204A (Tc)
Rds On (Max) @ Id, Vgs :
-
Vgs (th) (Max) @ Id :
4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs :
-
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 10V
Kapangyarihan - Max :
1130W
Temperatura ng pagpapatakbo :
-40°C ~ 150°C (TJ)
Uri ng Pag-mount :
-
Pakete / Kaso :
Module
Package ng Tagabigay ng Device :
Module
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