SSM6J507NU,LF Pagpepresyo (USD) [603363pcs Stock]
- 1 pcs$0.06777
- 3,000 pcs$0.06743
- Bilang ng Bahagi:
- SSM6J507NU,LF
- Tagagawa:
- Toshiba Semiconductor and Storage
- Detalyadong Paglalarawan:
- MOSFET P-CH 30V 10A 6UDFN.
- Manufacturer's standard lead time:
- Sa stock
- Buhay sa istante:
- Isang taon
- Chip Mula:
- Hong Kong
- RoHS:
- Paraan ng Pagbayad:
-
- Paraan ng pagpapadala:
- Mga Kategorya ng Pamilya:
- Ang KEY Components Co, LTD ay isang Electronic Components Distributor na nag-aalok ng mga kategorya ng produkto kasama ang: Transistor - Bipolar (BJT) - Single, Pre-Biased, Diode - Rectifiers - Arrays, Mga module ng Power driver, Diode - Zener - Single, Diode - Mga Rectifier ng Bridge, Mga Transistor - FET, MOSFET - RF, Transistor - Mga FET, MOSFET - Single and Thyristors - SCR - Mga Module ...
- Kumpetensyang Pakinabang:
- We specialize in Toshiba Semiconductor and Storage SSM6J507NU,LF electronic components. SSM6J507NU,LF can be shipped within 24 hours after order. If you have any demands for SSM6J507NU,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM6J507NU,LF Mga katangian ng produkto
Bilang ng Bahagi :
SSM6J507NU,LF
Tagagawa :
Toshiba Semiconductor and Storage
Paglalarawan :
MOSFET P-CH 30V 10A 6UDFN
Serye :
U-MOSVI
Katayuan ng Bahagi :
Active
Uri ng FET :
P-Channel
Teknolohiya :
MOSFET (Metal Oxide)
Drain sa Source Voltage (Vdss) :
30V
Kasalukuyang - Patuloy na Drain (Id) @ 25 ° C :
10A (Ta)
Boltahe sa Pagmaneho (Max Rds On, Min Rds On) :
4V, 10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 4A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20.4nC @ 4.5V
Vgs (Max) :
+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds :
1150pF @ 15V
Tampok ng FET :
-
Power Dissipation (Max) :
1.25W (Ta)
Temperatura ng pagpapatakbo :
150°C (TJ)
Uri ng Pag-mount :
Surface Mount
Package ng Tagabigay ng Device :
6-UDFNB (2x2)
Pakete / Kaso :
6-WDFN Exposed Pad
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